General Electric: Vintage Transistors / Diodes Collection

This site contains my collection of vintage transistors and diodes, most of them included with their original package or sleeves. The devices are produced in the late fifties and early sixties except the MOSFET's from Sony they where made in 1975. Enjoy the collectables and click on the picture links for more details. Suggestions regarding these transistors are welcome. I'm always looking for new semiconductor items to complete my collection, so if you would like to sell or exchange something, please contact me, jan@transparentsound.com.


G11 Type : G11, Germanium Point Contact PNP Transistor equivalent for the 2N30
Manufacturer : General Electric
Year : Early fifties, Price $17.40USD
Package, Case style : Orange/Blue Carton box and Transistors in plastic envelope, Small Black Metal cartridge Style
Spec's : Vcbo=-30V, Vce(max)=-50V, Power Gain=17dB, Ic=-7mA, P=100mW, ft=2MHz, Rb=200Ohm, Rc=20kOhm, Noise figure=57dB.
Photo's : Picture1, Picture2. Picture3, Picture4, Picture5 I would like to thank Mark Burgess and Joe Knight for a copy of the technical datasheet of the G11 Point Contact Transistor. The General Electric types G11 and G11 where the prototypes of the 2N30 and 2N31. A were the only Point Contact Transistors developed by GE that were made available for commercial distribution. Datasheet-G11-01, Datasheet-G11-02

1N23A Type : 1N23A, General Purpose UHF-MW Silicon Mixer Diode

Manufacturer : General Electric
Year : July, 1945
Package, Case style : Carton box, PIN
Spec's : Pin (W) (Test Condition) = 1.0m, R(L)(Ohms) (Test Condition) = 100, z(if) Min. (Ohms) IF Impedance = 300, z(if) Max. (Ohms) IF Impedance = 600, f(test) (Hz) Test Frequency = 10G
Photo's : Picture1, Picture2, Picture3

2N43 Type : 2N43, PNP Germanium Alloy Junction Device

Manufacturer : General Electric
Year : 1953
Package, Case style : Carton box, Black Metal Top Head, Can
Spec's : Vce(max)=-30V, Hfe=30, Ic=-300mA, P=150mW
Photo's : Picture1, Picture2, Picture3
The General electric Type 2N43 Germanium Alloy Junction Transistor Triode is a PNP unit particularly recommended for high gain, low power applications. A hermetic enclosure is provided by use of glass-to-metal seals and welded seams.

2N107 Type : 2N107, PNP Germanium Alloy Junction Device

Manufacturer : General Electric
Year : 1953
Package, Case style : Carton box, Black Metal Top Head, TO-5
Spec's : Vcbo=-12V, Vceo=-6V, Hfe=30, Ic=-10mA, Icbo=10uA, P=50mW, ft=1MHz, Cobo=40pF
Photo's : Picture1, Picture2, Picture3
The General electric Type 2N107 was originally developed for hobbyists and radio amateurs.

2N338 Type : 2N338, NPN Silicium Low Power Device,

Manufacturer : General Electric
Year : 030D, Week 30, 1960
Package, Case style : Carton box, Blue Metal TO-5
Spec's : Vcbo=45V, Vce(max)=20V, Hfe=45-150, Ic=20mA, P=125mW, ft=20MHz, Cobo=3pF
Photo's : Picture1, Picture2, Picture3, Picture4, (donated by Ronald Werner from Norway)

4JD3A2 Type : 4JD2A2, PNP Germanium Transistor

Manufacturer : General Electric
Year : ?
Package, Case : Plastic tube, Black Metal Top Head, Can
Spec's : Vce(max)=-?V, Hfe=?, Ic=-?mA, P=?mW
Photo's : Picture1, Picture2, Picture3, Picture4

ZJ3-1, proto type Type : ZJ3-1, Proto type PNP Germanium Transistor

Manufacturer : General Electric
Year : ?
Package, Case : Plastic tube, Black Metal Top Head, Can
Spec's : Vce(max)=-?V, Hfe=?, Ic=-?mA, P=?mW
Photo's : Picture1, Picture2, Picture3, Picture4

ZJ7, proto type Type : ZJ7, Proto type PNP Germanium Transistor

Manufacturer : General Electric
Year : ?
Package, Case : Plastic tube, Black Metal Top Head, Can
Spec's : Vce(max)=-?V, Hfe=?, Ic=-?mA, P=?mW
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5

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