Remaining United States: Vintage Transistors / Diodes Collection

AMDDelcoGTHi-tronHoffmanITTKemtronRRShockleySpragueTung-solTransitronUSWestinghouseWTZenith
This site contains my collection of vintage transistors and diodes, most of them included with their original package or sleeves. The devices are produced in the late fifties and early sixties except the MOSFET's from Sony they where made in 1975. Enjoy the collectables and click on the picture links for more details. Suggestions regarding these transistors are welcome. I'm always looking for new semiconductor items to complete my collection, so if you would like to sell or exchange something, please contact me, jan@transparentsound.com.

AMD semiconductors:

1N663A Type : 1N663A, High Speed Silicon Switching Diode

Manufacturer : CBS-Semiconductor
Year : ?
Package, Case : Sealed with plastic on a carton strip, DO-35
Spec's : Average Forward Current (Io)= 150mA, Forward Steady State Current (If)=200mA, Power dissipation (P)=500mW,
Peak Forward Surge Current (Ifsm)=4.0A, Peak Working Reverse Voltage (Vrwm)=80V, Junction Temperatute (Tj)=-65 to 200degrees
Photo's : Picture1, Picture2, Picture3

Home

Delco Semiconductors:

2N174 Type : 2N174, PNP Germanium Power Transistors

Manufacturer : Delco 
Year : week 18, 1959 and week 36, 1960
Package, Case style : Carton box, TO-36
Spec's : Vceo=-70V, Vcbo=-80V, Vce(sat max.)=0.9V, Hfe=25-50, Ic=-15A(max), Icbo=8mA(max), P=30W(max), ft=10kHz, t(r)Rise Time=15uS, t(r) Fall Time= 15uS,
Photo's : Picture1, Picture2, Picture3
2N256 Type : 2N256, PNP Germanium Power Transistors

Manufacturer : Delco 
Year : Code 339, week 39, 1963
Package, Case style : Carton box, TO-3
Spec's : Vcbo=-30V, Hfe=25-50, Ic=-3(max), P=1.5W(max), ft=200kHz
Photo's : Picture1, Picture2, Picture3, Picture4
2N1523 Type : 2N1523, PNP Germanium Power Transistor

Manufacturer : Delco 
Year : Sixties
Package, Case style : Carton box, TO-36ar
Spec's : Vceo=-60V, Vcbo=-80V, Hfe=25-100, Ic=-50A(max), Icbo=100uA(max), P=70W(max)
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5, Picture6

Home

General Transistor Semiconductors:

GT222 Type : GT222, PNP Germanium Transistor Low Power

Manufacturer : General Transistor
Year : Week 16, 1957
Package, Case : None, TO-22
Spec's : Vceo(max)=-?V, Vcbo(max)=-9V, Hfe=30, Ic=-10mA, Icbo=5uA, P=100mW, ft=420kHz, Cobo=?pF
Photo's : Picture1, Picture2, Picture3

Home

Hi-tron Semiconductors:

2N309 Type : 2N309, PNP Germanium Transistor

Manufacturer : Hi-tron Semiconductors 
Year : End Fifties
Package, Case style : Carton box, TO-22var
Spec's : Vcbo=-20V, Hfe=60, Ic=-5mA, Icbo=10uA, P=30mW, Cobo=1pF
Photo's : Picture1, Picture2, Picture3, Picture4

Home

Hoffman Semiconductors:

1N1530A Type : 1N1530A, General Purpose Regulator Diode

Manufacturer : Hoffman Electronics Corp. Semiconductor Division
Year : Week 46, 1960
Package, Case : Carton box, Metal Blue Can
Spec's : Vz=+8.4V, Iz=10mA, Tolerance=5%, Temp.Coef. (pp/10,000) Max.= .10, Z(z) Max=15Ω, P(D) Max.=250mW
Photo's : Picture1, Picture2, Picture3, Picture4

Home

ITT Semiconductors:

4E50, M-28 4Layer Diode Type : 4E50, M-28 Four-layer (Shockley) diode

Manufacturer : Hoffman Electronics Corp. Semiconductor Division
Year : Early sixties
Package, Case : none, DO-204AA, White glass
Spec's : Vbo(min)=46V, Vbo(max)=54V, Is(max)=125uA, Itrm(max)=250mA, Vr(max)=30V, I(h) max=45mA, V(tm)=1.2V,
Photo's : Picture1, Picture2, Picture3

Home

Kemtron Electron Products Inc.:

1N34 Type : 1N34, Germanium Diode

Manufacturer : Kemtron Electron Products Inc.
Year : 1959
Package, Case style : Carton envelope, ?
Spec's : Forward Current(Vf=1V)= 5mA, Reverse Voltage=75V(max), Ir(Vrm=10V)=30uA, Ir(Vrm=50V)=500uA
Photo's : Picture1, Picture2, Picture3
1N34 Type : 1N34, Germanium Diode

Manufacturer : Kemtron Electron Products Inc.
Year : October 30th, 1963
Package, Case style : Carton envelope, axial ceramic type?
Spec's : Forward Current(Vf=1V)= 5mA, Reverse Voltage=75V(max), Ir(Vrm=10V)=30uA, Ir(Vrm=50V)=500uA
Photo's : Picture1, Picture2
1N60 Type : 1N60, Germanium Diode

Manufacturer : Kemtron Electron Products Inc.
Year : Unknown, early sisxties
Package, Case style : None, axial ceramic type
Spec's : Forward Current, If= 5mA(max), Forward Voltage, Vf=1V(max), Reverse Voltage, Vr=20V(max), Reverse Current, Ir(Vrm=10V)=40uA
Photo's : Picture1, Picture2

Home

Radio Receptor Semiconductors:

RR66 Type : RR66, PNP Germanium Precision Alloy Photo Transistor

Manufacturer : Radio Receptor
Year : 1954. The RR66 was made by Radio Receptor and later by the take over from "GT" by General Transistor as GT66 and later under the name 2N318. The photo transistor is developed for Spartan Automotive for their automatic headlight dimmer.
Package, Case style : ?, Silver metal base with clear glass top
Spec's : RR66=2N318: Pc=50mW, Vce=-12Vmax, sense=25uA/ft, Fab=750kHz
Photo's : Picture1, Picture2, Picture3, Picture4

Home

Shockley Transistor Corporation:

4D80M-3 Type : 4D80M-3, Four Layer Diode

Manufacturer : Shockley Transistor Corporation
Year : Mid Fifties
Package, Case style : ?, Gold metal case
Spec's : Unknown, (Who can help me with the technical data?)
Photo's : Picture1, Picture2, Picture3, Donated by Rose Freeman US)
BND26 Type : BND26, Noise Diode

Manufacturer : Shockley Transistor Corporation
Year : Mid Fifties
Package, Case style : ?, Metal case
Spec's : Unknown, (Who can help me with the technical data?)
Photo's : Picture1, Picture2, Picture3

Home

Sprague Semiconductors:

MA-4 Type : MA-4, ? Germanium HF Transistor

Manufacturer : Philco
Year : April 1974
Package, Case style : Military (NSN 5961-00-954-2306) Silver paper, TO-24
Spec's : Unknown, (Who can help me with the technical data?)
Photo's : Picture1, Picture2, Picture3
2N128 Type : 2N128, PNP Germanium HF Transistor

Manufacturer : Philco
Year : April 1974
Package, Case style : None , TO-24 (Donated by Gerard Duperray France)
Spec's : Vceo=-4.5V, Vcbo=-10V, Hfe=19, Ic=-5mA, Icbo=3uA, P=25mW, f(T)=28MHz, Cobo=5pF
Photo's : Picture1, Picture2, Picture3

Home

Tung-Sol Semiconductors:

2N278 Type : 2N278, PNP Power Germanium Transistor

Manufacturer : Tung-Sol
Year : Code 130, week 30 1961
Package, Case style : Carton box, TO-36
Spec's : Vceo=-45V, Vcbo=-50V, Hfe=35-70, Ic=-15A, Icbo=15mA, P=170W, f(T)=10kHz, t(r)max=15uS, t(f)max=15uS
  : Picture1, Picture2, Picture3, Picture4
2N307A Type : 2N307A, PNP Power Germanium Transistor

Manufacturer : Tung-Sol
Year : Sixties
Package, Case style : Carton box, TO-3
Spec's : Vceo=-35V, Vcbo=-35V, Hfe=30-50, Ic=-5A, P=106W, f(T)=3.5kHz
  : Picture1, Picture2, Picture3, Picture4, Picture5, Picture6

Home

Transitron Semiconductors:

SV3173 Type : SV3173, General Purpose Reference Diode

Manufacturer : Transitron
Year : Week 52, 1962
Package, Case style : Carton box, Axial-18
Spec's : Reference Voltage (Vz)=8,4V, Max. Power dissipation (Pd)=500mW, Max. dynamical Impedance (Zz)=15R, Tolerance=5%, Max Temperature Coefficient (pp/10,000)=0.50
  : Picture1, Picture2, Picture3, Picture4
2N342 Type : 2N342, Silicium Power Transistor

Manufacturer : Transitron
Year : October, 1962
Package, Case style : Carton envelope with plastic tube, TO-11
Spec's : Vceo=-60V, Vcbo=-60V, Hfe=11, Ic=-60mA, Icbo=1uA, P=1W
  : Picture1, Picture2, Picture3

Home

U.S. Transistor:

2N43A Type : 2N43A, PNP Germanium Transistor

Manufacturer : U.S. Transistor Corp.
Year : Sixties
Package, Case style : Carton box, TO-5
Spec's : Vceo=-30V, Vcbo=-45V, Hfe=30, Ic=-300mA, Icbo=16uA, P=150mW, f(T)=1.3MHz, Cobo=60pF
  : Picture1, Picture2, Picture3, Picture4, Picture5

Home

Westinghouse:

308F Type : 308F Germanium Power diode (New)

Manufacturer : Westinghouse
Year : Mid fifties.
Package, Case style : Carton box, originally used for carring sixteen power diodes. (I'm looking for technical data)
Spec's : Vceo=-?V, Vcbo=-?V, Hfe=?, Ic=-?mA, Icbo=?uA, P=?mW, f(T)=?MHz, Cobo=?pF
  : Picture1, Picture2, Picture3, Picture4, Picture5
WX3347 Type : WX3347, Germanium PNP Point Contact Transistor

Manufacturer : Westinghouse
Year : Early fifties, The development of this device was done in their Tube division in Elmira, New York
Package, Case style : Carton envelope, Orange plastic with strange small and three fragile wires without any marks on it. (I'm looking for technical data)
Spec's : Vceo=-?V, Vcbo=-?V, Hfe=?, Ic=-?mA, Icbo=?uA, P=?mW, f(T)=?MHz, Cobo=?pF
  : Picture1, Picture2, Picture3, Picture4
WX4813 Type : WX4813, Germanium PNP Junction Transistor

Manufacturer : Westinghouse
Year : Early fifties, The development of this device was done in their Tube division in Elmira, New York
Package, Case style : Carton envelope, Orange plastic with strange small and three wires without any marks on it. (I'm looking for technical data)
Spec's : Vceo=-?V, Vcbo=-?V, Hfe=?, Ic=-?mA, Icbo=?uA, P=?mW, f(T)=?MHz, Cobo=?pF
  : Picture1, Picture2, Picture3, Picture4

Home

Workman TV:

BA6 Type : BA6, PNP Germanium Transistor, in Blister

Manufacturer : Workman TV Products Inc.
Year : September 1960
Package, Case style : Blister, Not defined
Spec's : Unknown, (Who can help me with the technical data?)
Photo's : Picture1, Picture2
6MC Type : 6MC, PNP Germanium Transistor, in Blister

Manufacturer : Workman TV Products Inc.
Year : Sixties
Package, Case style : Blister, Not defined
Spec's : ft=6MHz, rest unknown, (Who can help me with the technical data?)
Photo's : Picture1, Picture2

Home

Zenith Semiconductors:

121-361   : 121-361, High Voltage NPN Transistor, Thanks to Thomas Ernst from Germany for his technical input regarding the NTE154

Manufacturer : Zenith
Year : Mid sixties, this device has a NTE replacement, NTE154
Package, Case style : Carton box, TO-39
Spec's : Datasheet from NTE154, Vcbo=+300V, Vceo=+300V, Vebo=+7V, Hfe=40-100, Ic=-5mA, Icbo=10uA, P=7W, Cobo=3pF, ft=50MHz
Photo's : Picture1, Picture2, Picture3, Picture4, Picture5, Picture6,  Picture7

Home